Single Crystal Silicon Ingot
SICREAT(Suzhou) Semitech Co.,Ltd. (hereinafter referred to as “Sicreat”) After years of research and development, it adopts MCZ (Superconducting Magnetic Czochralski) to grow large-sized semiconductor-grade single crystal silicon ingot, with a maximum diameter of 485mm, and the capacity of raw material for a single furnace charge up to 400kg, and continuous research on ultra-large-sized silicon Ingot, with extremely low impurity content, dislocation defects free, smooth resistivity uniformity, and high growth yield.
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